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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1223 DESCRIPTION With TO-220F package Complement to type 2SD1825 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector DESCRIPTION Emitter PARAMETER Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base OND IC TOR UC VALUE -70 -60 -6 -4 -6 CONDITIONS UNIT V V V A A Open emitter Open collector TC=25ae PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 20 W 2 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB1223 SYMBOL MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -70 V V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE= -60 V VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-4mA -1.0 -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ; IB=-4mA -2.0 V ICBO Collector cut-off current VCB=-40V;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain fT Switching times Transition frequency ANG CH IC=-2A ; VCE=-2V 2000 5000 IC=-2A ; VCE=-5V ton Turn-on time tstg Storage time IN EMIC ES DUC ON 20 TOR MHz 0.5 |I s IC=500IB1=-500IB2=-2A VCC=-20V ,RL=10| 1.4 |I s tf Fall time 1.2 |I s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1223 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
Price & Availability of 2SB1223 |
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